Storage device including random access memory devices and nonvolatile memory devices

ABSTRACT

A storage device includes random access memories, nonvolatile memory devices, a controller configured to control the nonvolatile memory devices, and a driver circuit configured to receive a command and an address from an external device, output a buffer command according to the command and the address, and transmit the command and the address to one of a first channel connected to the random access devices and a second channel connected to the controller according to the command and the address. The storage device further includes a plurality of data buffers configured to communicate with the external device and electrically connect the external device to one of a third channel connected to the random access memory devices and a fourth channel connected to the controller in response to the buffer command. Each of the data buffers includes a FIFO (first-in first-out) circuit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a Continuation of U.S. application Ser. No. 15/260,916, filedSep. 9, 2016, in which a claim of priority under 35 U.S.C. § 119 is madeto Korean Patent Application No. 10-2015-0128901, filed on Sep. 11,2015, the entire contents of which are hereby incorporated by reference.

BACKGROUND

The present inventive concept herein relates to semiconductor memories,and more particularly, to a storage device including random accessmemory devices and nonvolatile memory devices.

Computing devices generally include a processor, a main memory deviceand a storage device. As semiconductor technology develops, performanceof processors, as well as main memory devices and storage devices, hasimproved. As performance of processors, main memory devices and storagedevices has improved, the performance of computing devices hasconsequently also improved.

The performance of storage devices is a factor that usually impedesoperation speed of computing devices. However, as nonvolatile memoriessuch as a phase change random access memory (PRAM), resistive RAM(RRAM), magnetic RAM (MRAM), and ferroelectric RAM (FeRAM) are now beingused in storage devices, the performance of storage devices has greatlyimproved. Accordingly, attention has recently shifted to thecommunication speed between the processor and the storage device as afactor impeding operation speed of computing devices.

Thus, there is a desire to provide devices and methods for improvingcommunication speed between processors and storage devices. Devices andmethods for solving problems related to the process of improvingcommunication speed between processors and storage devices are alsodesired.

SUMMARY

Embodiments of the inventive concept provide a storage device. Thestorage device includes a plurality of random access memories; aplurality of nonvolatile memory devices; a controller configured tocontrol the nonvolatile memory devices; and a driver circuit configuredto receive a command and an address from an external device, output abuffer command according to the command and the address, and transmitthe command and the address to one of a first channel connected to therandom access devices and a second channel connected to the controlleraccording to the command and the address. The storage device furtherincludes a plurality of data buffers configured to communicate with theexternal device and electrically connect the external device to one of athird channel connected to the random access memory devices and a fourthchannel connected to the controller in response to the buffer command.Each of the data buffers includes a (first-in first-out (FIFO) circuit.

Embodiments of the inventive concept also provide a storage device thatincludes a plurality of random access memory devices configured tocommunicate with an external device through a third channel; a pluralityof nonvolatile memory devices; a controller configured to communicatewith the external device through a fourth channel and to control thenonvolatile memory devices; and a driver circuit configured to receive acommand and an address from the external device and to transmit thecommand and the address to one of a first channel connected to therandom access memory devices and a second channel connected to thecontroller according to the command and the address. The storage devicefurther includes a first-in first-out (FIFO) circuit provided in thefourth channel.

Embodiments of the inventive concept further provide a storage deviceincluding a plurality of random access memories; a plurality ofnonvolatile memory devices; a plurality of data buffers configured tocommunicate with an external device and to electrically connect theexternal device with one of the random access memories and thenonvolatile memories responsive to a buffer command; and a first-infirst-out (FIFO) circuit disposed in a channel between the data buffersand the nonvolatile memory devices, and configured to store dataprovided by the external device and output the stored data to thenonvolatile memory devices. The channel has a bandwidth smaller than abandwidth of a channel between the data buffers and the random accessmemories.

BRIEF DESCRIPTION OF THE FIGURES

Embodiments of the inventive concept will be described below in moredetail with reference to the accompanying drawings. The embodiments ofthe inventive concept may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the inventiveconcept to those skilled in the art. Like numbers refer to like elementsthroughout.

FIG. 1 illustrates a block diagram of a computing device in accordancewith some embodiments of the inventive concept.

FIG. 2 illustrates a block diagram of a hybrid storage device inaccordance with some embodiments of the inventive concept.

FIG. 3 illustrates an example of data buffers.

FIG. 4 illustrates another example of data buffers.

FIG. 5 illustrates a block diagram of an application example of thehybrid storage device of FIG. 2.

FIG. 6 illustrates a block diagram of another application example of thehybrid storage device of FIG. 2.

FIG. 7 illustrates an example of signal lines connected to data buffers.

FIG. 8 illustrates a block diagram of still another application exampleof the hybrid storage device of FIG. 2.

FIG. 9 illustrates a block diagram of yet another application example ofthe hybrid storage device of FIG. 2.

FIG. 10 illustrates a block diagram of still yet another applicationexample of the hybrid storage device of FIG. 2.

FIG. 11 illustrates an example of a connection point of FIG. 10.

FIG. 12 illustrates a flowchart of an operation method of a hybridstorage device in accordance with some embodiments of the inventiveconcept.

FIG. 13 illustrates a block diagram of one of nonvolatile memory devicesin accordance with some embodiments of the inventive concept.

FIG. 14 illustrates a circuit diagram of a memory block in accordancewith some embodiments of the inventive concept.

FIG. 15 illustrates an example of a server device on which at least oneof hybrid storage devices in accordance with some embodiments of theinventive concept is mounted.

DETAILED DESCRIPTION

Embodiments of inventive concepts will be described more fullyhereinafter with reference to the accompanying drawings, in whichembodiments of the inventive concept are shown. This inventive conceptmay, however, be embodied in many different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the inventive concept tothose skilled in the art. In the drawings, the size and relative sizesof layers and regions may be exaggerated for clarity. Like numbers referto like elements throughout.

As is traditional in the field of the inventive concepts, embodimentsmay be described and illustrated in terms of blocks which carry out adescribed function or functions. These blocks, which may be referred toherein as units or modules or the like, are physically implemented byanalog and/or digital circuits such as logic gates, integrated circuits,microprocessors, microcontrollers, memory circuits, passive electroniccomponents, active electronic components, optical components, hardwiredcircuits and the like, and may optionally be driven by firmware and/orsoftware. The circuits may, for example, be embodied in one or moresemiconductor chips, or on substrate supports such as printed circuitboards and the like. The circuits constituting a block may beimplemented by dedicated hardware, or by a processor (e.g., one or moreprogrammed microprocessors and associated circuitry), or by acombination of dedicated hardware to perform some functions of the blockand a processor to perform other functions of the block. Each block ofthe embodiments may be physically separated into two or more interactingand discrete blocks without departing from the scope of the inventiveconcepts. Likewise, the blocks of the embodiments may be physicallycombined into more complex blocks without departing from the scope ofthe inventive concepts.

It should be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present inventiveconcept. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items.

It should be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting of the inventive concept.As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes” and/or “including,” when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 illustrates a block diagram of a computing device in accordancewith some embodiments of the inventive concept. Referring to FIG. 1,computing device 1000 includes processor 1100, high speed storage device1200, chipset 1300, graphic processor 1400, display device 1500, I/O(input/output) device 1600, and storage device 1700.

The processor 1100 controls an overall operation of the computing device1000 and performs a logical operation. The processor 1100 drives an OS(operating system) and applications. The processor 1100 may be a CPU(central processing unit) or an AP (application processor).

The high speed storage device 1200 is configured to communicate with theprocessor 1100 through the high speed interface 1230. The high speedstorage device 1200 includes one or more main memory devices 1210 andone or more hybrid storage devices 100. Hereinafter, the one or moremain memory devices 1210 may be referred to in a singular or pluralsense, and the one or more hybrid storage devices 100 may be referred toin a singular or plural sense. The main memory device 1210 may be usedas an operation memory of the processor 1100. The main memory device1210 may include a dynamic random access memory (DRAM), or morespecifically a double data rate (DDR) synchronous dynamic random accessmemory (SDRAM). The main memory device 1210 may be configured to operatebased on a specification of a registered dual in-line memory module(RDIMM) or a load reduced DIMM (LRDIMM). The high speed interface 1230may include a DIMM interface determined by a specification.

The hybrid storage device 100 may be connected to the high speedinterface 1230 similar to the main memory device 1210, for example by aDIMM interface. The hybrid storage device 100 may include nonvolatilememory devices such as flash memory, phase-change random access memory(PRAM), resistive RAM (RRAM), magnetic RAM (MRAM), ferroelectric RAM(FeRAM), or the like, and random access memory devices such as DRAM,SRAM, MRAM, PRAM, RRAM, FeRAM, or the like. The nonvolatile memorydevices included in the hybrid storage device 100 provide datapermanence, while the random access memory devices included in thehybrid storage device 100 provide a high speed characteristic of dataaccess. That is, the hybrid storage device 100 may have flexibility ofsupporting permanence with respect to some data and supporting highspeed access characteristics with respect to some data. Since the hybridstorage device 100 is connected to the high speed interface 1230, it mayhave improved communication speed. The hybrid storage device 100 may beconfigured to operate based on a specification of a DIMM, morespecifically a RDIMM or LRDIMM.

The chipset 1300 is configured to arbitrate a connection between theprocessor 1100 and other devices according to control of the processor1100. For example, the chipset 1300 may include a south bridge. Thechipset 1300 may also include a sound processor, an Ethernet adapter, orother components.

The graphic processor 1400 is configured to perform image processing anddisplay an image on the display device 1500. The graphic processor 1400may be a GPU (graphic processing unit). In some embodiments, the graphicprocessor 1400 may be included inside the chipset 1300.

The display device 1500 is configured to output an image according tocontrol of the graphic processor 1400. For example, the display device1500 may include a liquid crystal display (LCD) device, a light emittingdiode (LED) display device, a beam projector, or the like.

The I/O device 1600 may include an input device configured to receive asignal from a user, and an output device configured to output a signalto a user. For example, the I/O device 1600 may include an input devicesuch as a keyboard, a mouse, a microphone, a touchpad, a touch panel, orthe like, and an output device such as a speaker, a ramp, a printer, orthe like.

The storage device 1700 is configured to operate according to control ofthe chipset 1300. The storage device 1700 communicates with the chipset1300 based on an interface such as serial At attachment (SATA),universal serial bus (USB), universal flash storage (UFS), peripheralcomponent interconnection (PCI), PCIexpress, a NVMexpress, smallcomputer system interface (SCSI), serial attached SCSI (SAS), or thelike.

A communication speed (e.g., a communication speed between the processor1100 and the hybrid storage device 100) of the hybrid storage device 100directly connected to the processor 1100 through the high speedinterface 1230 is higher than a communication speed (e.g., acommunication speed between the chipset 1300 and the storage device1700) of the storage device 1700 connected to the chipset 1300. Thus, ifthe hybrid storage device 100 connected to the processor 1100 throughthe high speed interface 1230 is provided, operation performance of thecomputing device 1000 is improved.

FIG. 2 illustrates a block diagram of a hybrid storage device inaccordance with some embodiments of the inventive concept. Referring toFIGS. 1 and 2, the hybrid storage device 100 includes data buffers 110,driver circuit 120, a serial presence detect (SPD) 130, random accessmemory devices 140, a controller 150, and nonvolatile memory devices160.

The data buffers 110 may receive data signals DQ and data strobe signalsDQS through the high speed interface 1230. The data buffers 110 may beconfigured according to a DDR4 LRDIMM specification. For example, 9 databuffers 110 may be provided to the hybrid storage device 100. Each ofthe data buffers 110 can communicate 8 data signals DQ and 2 data strobesignals DQS to an external device, for instance, the processor 1100.

The data buffers 110 can communicate with the random access memorydevices 140. For example, in response to a buffer command (CMD_B), thedata buffers 110 can transmit data signals DQ and data strobe signalsDQS received from the external device to the random access memorydevices 140 through a third channel CH3. In response to the buffercommand (CMD_B), the data buffers 110 can transmit data signals DQ anddata strobe signals DQS received from the random access memory devices140 through the third channel CH3 to the external device.

The data buffers 110 can communicate with the controller 150. Inresponse to the buffer command (CMD_B), the data buffers 110 cantransmit data signals DQ and data strobe signals DQS received from theexternal device to the controller 150 through a fourth channel CH4. Inresponse to the buffer command (CMD_B), the data buffers 110 cantransmit data signals DQ and data strobe signals DQS received from thecontroller 150 through the fourth channel CH4 to the external device.

In response to the buffer command (CMD_B), the data buffers 110 canelectrically connect the external device to one of the third channel CH3and the fourth channel CH4. That is, in response to the buffer command(CMD_B), the data buffers 110 can exchange data signals DQ and datastrobe signals DQS between the random access memory devices 140 and theexternal device, or can exchange data signals DQ and data strobe signalsDQS between the controller 150 and the external device.

The data buffers 110 are configured to store received data signals DQand output the stored data signals DQ. For example, the data buffers 110can store and output data signals DQ in synchronization with data strobesignals DQS. By storing and outputting data signals DQ, the data buffers110 can rearrange timing between the data signals DQ and the data strobesignals DQS. That is, a skew of the data signals DQ may be improvedbased on the data buffers 110.

The driver circuit 120 receives a command CMD, an address ADDR and aclock CK from the external device through the high speed interface 1230.The driver circuit 120 outputs the buffer command (CMD_B) based on thereceived command CMD and the received address ADDR. For example, whenthe received address ADDR indicates the random access memory devices140, the driver circuit 120 outputs the buffer command (CMD_B)requesting a communication with the random access memory devices 140.When the received address ADDR indicates the nonvolatile memory devices160, the driver circuit 120 outputs the buffer command (CMD_B)requesting a communication with the controller 150.

The driver circuit 120 transmits the command CMD, the address ADDR andthe clock CK that are received from the external device through the highspeed interface 1230 to the random access memory devices 140 or thecontroller 150. For example, when the received address ADDR indicatesthe random access memory devices 140, the driver circuit 120 transmitsthe command CMD, the address ADDR and the clock CK that are received tothe random access memory devices 140 via the first channel CH1. When thereceived address ADDR indicates the nonvolatile memory devices 160, thedriver circuit 120 transmits the command CMD, the address ADDR and theclock CK that are received to the controller 150 via the second channelCH2.

The driver circuit 120 may be configured to perform functions andoperations of a registered clock driver (RCD) according to a DIMMspecification.

The SPD 130 is configured to communicate with the processor 1100 throughsupplemental signals SS of the high speed interface 1230. The SPD 130 isconfigured to communicate with the driver circuit 120 through thesupplemental signals SS. The supplemental signals SS may include serialperipheral interface (SPI) signals, inter-integrated circuit (I2C)signals, universal asynchronous receiver/transmitter (UART) signals, orthe like. For example, the SPD 130 can store information about aphysical characteristic, a logical characteristic, and a drivingcharacteristic of the hybrid storage device 100. The information storedin the SPD 130 can be read by the processor 1100 through thesupplemental signals SS of the high speed interface 1230 when power issupplied to the computing device 1000.

The random access memory devices 140 exchange data signals DQ and datastrobe signals DQS with the data buffers 110 through a third channelCH3. The random access memory devices 140 receive the command CMD, theaddress ADDR and the clock CK from the driver circuit 120 through afirst channel CH1. The random access memory devices 140 perform read andwrite operations in response to the command CMD, the address ADDR andthe clock CK. Data to be written in the random access memory devices 140may be received by the random access memory devices 140 as the datasignals DQ and the data strobe signals DQS transmitted from the databuffers 110. Data read from the random access memory devices 140 may betransmitted to the data buffers 110 as the data signals DQ and the datastrobe signals DQS.

The random access memory devices 140 may include devices satisfying aDIMM specification, for example, a DRAM.

The controller 150 communicates the data signals DQ and the data strobesignals DQS from the data buffers 110. For example, when the datasignals DQ and the data strobe signals DQS are received from the databuffers 110, the controller 150 receives the data signals DQ insynchronization with the data strobe signal DQS. When the controller 150outputs the data signals DQ and the data strobe signals DQS, thecontroller 150 outputs the data signals DQ in synchronization with thedata strobe signal DQS. For example, the controller 150 communicateswith the data buffers 110 according to a communication regulation of thedata signals DQ and the data strobe signals DQS defined by a DIMMspecification.

The controller 150 receives the command CMD, the address ADDR and theclock CK from the driver circuit 120. The controller 150 accesses thenonvolatile memory devices 160 in response to the command CMD, theaddress ADDR and the clock CK that are received.

The controller 150 can exchange a control signal with the nonvolatilememory devices 160 through a control channel and can exchange thecommand CMD, the address ADDR and the data signals DQ with thenonvolatile memory devices 160 through an I/O (input/output) channel.

For example, the controller 150 transmits a chip enable signal (/CE)selecting at least one nonvolatile memory device among the nonvolatilememory devices 160, a command latch enable signal (CLE) indicating thatsignals transmitted from the controller 150 through the I/O channel aresecond commands for the nonvolatile memory devices 160, an address latchenable signal (ALE) indicating that signals being transmitted from thecontroller 150 through the I/O channel are second addresses for thenonvolatile memory devices, a read enable signal (/RE) that is generatedfrom the clock CK by the controller 150 and is periodically toggled tobe used to adjust timing in a read operation, a write enable signal(/WE) activated by the controller 150 when the second commands or thesecond addresses are transmitted, a write protecting signal (/WP)activated by the controller 150 to prevent an unwanted write or erasewhen a power supply is changed, and a second data strobe signal (DQS)for the nonvolatile memory devices 160 that is generated from the clockCK by the controller 150 and is periodically toggled in a writeoperation to be used to adjust a sync of data transmitted to thenonvolatile memory devices 160.

The controller 150 may also receive a ready & busy signal (R/nB) fromthe nonvolatile memory devices 160 indicating that the nonvolatilememory devices 160 are performing a program, erase or read operation,and the second data strobe signal (DQS) that is generated from the readenable signal (/RE) by the nonvolatile memory devices 160 and isperiodically toggled to be used to adjust an output sync of datatransmitted from the nonvolatile memory devices 160.

The nonvolatile memory devices 160 may include flash memory devices.However, the nonvolatile memory devices 160 are not limited to includeflash memory devices. The nonvolatile memory devices 160 may includevarious kinds of nonvolatile memory devices such as phase-change RAM(PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), ferroelectric RAM(FeRAM), or the like.

The controller 150 and the nonvolatile memory devices 160 may beconnected to one another based on a channel and a way. One channel mayinclude one data channel and one control channel. One data channel mayinclude 8 data lines. One control channel may include control linestransmitting the chip enable signals (/CE), the command latch enablesignal (CLE), the address latch enable signal (ALE), the read enablesignal (/RE), the write enable signal (/WE), the write protecting signal(/WP), and the ready & busy signals (R/nB).

Nonvolatile memory devices connected to one channel may form a way. If nnumber of nonvolatile memory devices are connected to one channel, thenonvolatile memory devices may form an n-way. Nonvolatile memory devicesthat belong to one way can share data lines and control linestransmitting the chip enable signals (/CE), the command latch enablesignal (CLE), the address latch enable signal (ALE), the read enablesignal/RE, the write enable signal/WE, and the write protecting signal(/WP). Each of the nonvolatile memory devices that belong to one way cancommunicate with the controller 150 through exclusive control linestransmitting the chip enable signal (/CE) and the ready & busy signals(R/nB).

The controller 150 can alternately access n-way nonvolatile memorydevices connected to one channel. The controller 150 can independentlyaccess nonvolatile memory devices connected to different channels fromone another. The controller 150 can alternately or simultaneously accessnonvolatile memory devices connected to different channels from oneanother.

The nonvolatile memory devices 160 may be connected to the controller150 in a wide IO form. For example, nonvolatile memory devices connectedto different channels from one another may share a control line of onechip enable signal (/CE). The nonvolatile memory devices sharing acontrol line of one chip enable signal (/CE) may be accessed at the sametime. Since data lines of different channels are used at the same time,a wide input/output bandwidth may be accomplished.

As described above, according to an address ADDR received from theexternal device, the hybrid storage device 100 sets a communication pathbetween the hybrid storage device 100 and an external device so that theexternal device accesses one of the random access memory devices 140 andthe nonvolatile memory devices 160. That is, the random access memorydevices 140 and the nonvolatile memory devices 160 of the hybrid storagedevice 100 may be identified by the external device and may beaddressable. Information about the random access memory devices 140 andthe nonvolatile memory devices 160 of the hybrid storage device 100 isstored in the SPD 130 and may be identified by the external device whenpower is turned on.

Referring to FIGS. 1 and 2, if the hybrid storage device 100 isconnected to the processor 1100 through the high speed interface 1230,the processor 1100 can directly access the random access memory devices140 and the nonvolatile memory devices 160. Thus, a speed of thecomputing device 1000 is improved and flexibility of the computingdevice 1000 is improved.

FIG. 3 illustrates an example of data buffers. Referring to FIGS. 2 and3, the data buffer 110_1 includes a buffer circuit (BC) and a FIFO(first-in first-out) circuit (FC). The buffer circuit (BC) can receivethe data signals DQ and the data strobe signals DQS from the high speedinterfaces 1230. In response to the buffer command (CMD_B), the buffercircuit (BC) can store the data signals DQ in synchronization with thedata strobe signals DQS. In response to the buffer command (CMD_B), thebuffer circuit (BC) can output the stored data signals DQ to the thirdchannel CH3 or the FIFO circuit (FC) in synchronization with the datastrobe signals DQS.

In response to the buffer command (CMD_B), the buffer circuit (BC) canreceive the data signals DQ and the data strobe signals DQS from theFIFO circuit (FC) or the random access memory devices 140. The buffercircuit (BC) can store the data signals DQ in synchronization with thedata strobe signals DQS. In response to the buffer command (CMD_B), thebuffer circuit (BC) can output the stored data signals DQ through thehigh speed interface 1230 in synchronization with the data strobesignals DQS.

The FIFO circuit (FC) can store data signal DQ output from the buffercircuit (BC) and can output the stored data signals DQ to the controller150 through the fourth channel CH4 according to a FIFO (first-infirst-out) policy. The FIFO circuit (FC) can store data signal DQ outputfrom the controller 150 through the fourth channel CH4 and can outputthe stored data signals DQ to the buffer circuit (BC) according to aFIFO (first-in first-out) policy.

In the fourth channel CH4, the controller 150 and the FIFO circuit (FC)can exchange the data signals DQ with each other based on second datastrobe signals DQS2. For example, the second data strobe signals DQS2may have a frequency lower than a frequency of the data strobe signalsDQS communicated through the third channel CH3. The controller 150 cangenerate the second data strobe signals DQS2 having a frequency lowerthan a frequency of the data strobe signals DQS on the basis of theclock CK. Using the second data strobe signals DQS2, the controller 150can read the data signals DQ from the FIFO circuit (FC) or can write thedata signals DQ in the FIFO circuit (FC).

In some embodiments, the second data strobe signals DQS2 may have thesame frequency as the frequency of the data strobe signals DQScommunicated through the third channel CH3. The controller 150 generatesthe data strobe signals DQS from the clock signal CK, and can read thedata signals DQ from the FIFO circuit (FC) in synchronization with thedata strobe signals DQS or can write the data signals DQ in the FIFOcircuit (FC).

A speed that the controller 150 accesses the nonvolatile memory devices160 may be lower than a speed that the random access memory devices 140is accessed by the external device. As illustrated in FIG. 3, if theFIFO circuit (FC) is provided, a low access speed of the nonvolatilememory devices 160 is compensated and a speed of the hybrid storagedevice 100 is improved.

FIG. 4 illustrates another example of data buffers 110. Referring toFIG. 4, a data buffer 110_2 includes the FIFO circuit (FC) and thebuffer circuit (BC). As compared with the data buffer 110_1 of FIG. 3,the data buffer 110_2 includes a write path (WP) and a read path (RP)connected to the fourth channel CH4.

The write path (WP) includes a path through which the data signals DQstored in the buffer circuit (BC) are transmitted to the fourth channelCH4 (to the controller 150). The read path (RP) includes a path throughwhich the data signals DQ are transmitted from the fourth channel CH4(from the controller 150) to the buffer circuit (BC).

The buffer circuit (BC) is directly connected to the fourth channel CH4(to the controller 150) through the read path (RP). For example, whenthe controller 150 transmits the data signals DQ to the data buffer110_2 through the fourth channel CH4, the data signals DQ and the datastrobe signals DQS can be directly transmitted from the controller 150to the buffer circuit (BC) through the fourth channel CH4 and the readpath (RP).

The FIFO circuit (FC) is provided on the write path (WP) between thebuffer circuit (BC) and the fourth channel CH4. The data signals DQtransmitted from the buffer circuit (BC) to the fourth channel CH4 (tothe controller 150) are stored in the FIFO circuit (FC) and then thestored data signals in the FIFO circuit (FC) may be transmitted to thecontroller 150 to be read by the controller 150.

A reading speed of the nonvolatile memory devices 160 is similar to areading speed of the random access memory devices 140, and a write speedof the nonvolatile memory devices 160 may be lower than a write speed ofthe random access memory devices 140. As illustrated in FIG. 4, if theFIFO circuit (FC) is provided on the write path (WP) of the data buffer110_2, a mismatch of access speeds of the random access memory devices140 and the nonvolatile memory devices 160 that occurs due to low speedoperation of the nonvolatile memory devices 160 may be compensated whileminimizing resources needed to install the FIFO circuit (FC) andresources needed to manage the FIFO circuit (FC).

FIG. 5 illustrates a block diagram of an application example of thehybrid storage device of FIG. 2. Referring to FIGS. 1 and 5, the hybridstorage device 100 a includes data buffers 110, driver circuit 120,serial presence detect (SPD) 130, random access memory devices 140,controller 150 a and nonvolatile memory devices 160. The followingdescription will focus on the differences between the hybrid storagedevice 100 shown in FIG. 2 and the hybrid storage device 100 a shown inFIG. 5, and description of features in FIGS. 2 and 5 that are the samemay be omitted for the sake of brevity.

As compared with the hybrid storage device 100 of FIG. 2, the controller150 a of the hybrid storage device 100 a includes FIFO circuit (FC).

Similarly as described with reference to FIG. 3, the FIFO circuit (FC)in controller 150 a of the hybrid storage device 100 a shown in FIG. 5is provided on a read path and a write path connected to a fourthchannel CH4. Data signals DQ transmitted from the data buffers 110 tothe controller 150 a are firstly stored in the FIFO circuit (FC). Thedata signals DQ stored in the FIFO circuit (FC) are then written in thenonvolatile memory devices 160 by the controller 150 a. Data signals DQread from the nonvolatile memory devices 160 by the controller 150 a arestored in the FIFO circuit (FC) before the data signals DQ are output tothe data buffers 110, and after that the data signals DQ stored in theFIFO circuit (FC) are transmitted to the data buffers 110.

In some embodiments, similarly as described with reference to FIG. 4,the FIFO circuit (FC) in controller 150 a of the hybrid storage device100 a shown in FIG. 5 may be provided on the write path connected to thefourth channel CH4. Data signals DQ transmitted from the data buffers110 to the controller 150 a may be firstly stored in the FIFO circuit(FC). The data signals DQ stored in the FIFO circuit (FC) may then bewritten in the nonvolatile memory devices 160 by the controller 150 a.Data signals DQ read from the nonvolatile memory devices 160 by thecontroller 150 a may be output directly to the data buffers 110 withoutbeing stored in the FIFO circuit (FC).

FIG. 6 illustrates a block diagram of another application example of thehybrid storage device of FIG. 2. Referring to FIGS. 1 and 6, the hybridstorage device 100 b includes data buffers 110, driver circuit 120,serial presence detect (SPD) 130, random access memory devices 140,controller 150, nonvolatile memory devices 160 and FIFO circuit (FC).The following description will focus on the differences between thehybrid storage device 100 shown in FIG. 2 and the hybrid storage device100 b shown in FIG. 6, and description of features in FIGS. 2 and 6 thatare the same may be omitted for the sake of brevity.

As compared with the hybrid storage device 100 of FIG. 2, the hybridstorage device 100 b further includes the FIFO circuit (FC). The FIFOcircuit (FC) is provided on a fourth channel CH4 between the databuffers 110 and the controller 150.

Similarly as described with reference to FIG. 3, the FIFO circuit (FC)is provided on a read path and a write path of the fourth channel CH4.Data signals DQ transmitted from the data buffers 110 to the controller150 are firstly stored in the FIFO circuit (FC). The data signals DQstored in the FIFO circuit (FC) are then transmitted to the controller150. Data signals DQ read from the nonvolatile memory devices 160 by thecontroller 150 are stored in the FIFO circuit (FC), and after that thedata signals DQ stored in the FIFO circuit (FC) are transmitted to thedata buffers 110.

In some embodiments, similarly as described with reference to FIG. 4,the FIFO circuit (FC) of the hybrid storage device 100 b shown in FIG. 6may be provided on the write path of the fourth channel CH4. Datasignals DQ transmitted from the data buffers 110 to the controller 150may be stored in the FIFO circuit (FC). The data signals DQ stored inthe FIFO circuit (FC) may then be transmitted to the controller 150.Data signals DQ read from the nonvolatile memory devices 160 by thecontroller 150 may be directly output to the data buffers 110 withoutpassing through the FIFO circuit (FC).

FIG. 7 illustrates an example of signal lines connected to data buffers.Referring to FIGS. 2 and 7, each data buffer 110 can communicate with anexternal device through first through Nth data signal lines (DQ[1:N])and first through Mth data strobe signal lines (DQS[1:M]). N and M arepositive integers.

The third channel CH3 through which each data buffer 110 communicateswith the random access memory devices 140 includes first through Nthdata signal lines (DQ[1:N]) and first through Mth data strobe signallines (DQS[1:M]). That is, when each data buffer 110 connects the highspeed interface 1230 and the third channel CH3, each data buffer 110 canconnect the first through Nth data signal lines (DQ[1:N]) and the firstthrough Mth data strobe signal lines (DQS[1:M]) of the high speedinterface 1230 to the first through Nth data signal lines (DQ[1:N]) andthe first through Mth data strobe signal lines (DQS[1:M]) of the thirdchannel CH3 respectively.

The fourth channel CH4 through which each data buffer 110 communicateswith the controller 150 includes first through Ith data signal lines(DQ[1:I]) and first through Jth data strobe signal lines (DQS[1:J]). Imay be a positive integer smaller than N and J may be a positive integersmaller than M. That is, when each data buffer 110 connects the highspeed interface 1230 and the fourth channel CH4, each data buffer 110can connect parts of the first through Nth data signal lines (DQ[1:N])of the high speed interface 1230 to the first through Ith data signallines (DQ[1:I]) of the fourth channel CH4 and connect parts of the firstthrough Mth data strobe signal lines (DQS[1:M]) of the high speedinterface 1230 to the first through Jth data strobe signal lines(DQS[1:J]) of the fourth channel CH4.

A bandwidth (e.g., the number of signal lines) within which thecontroller 150 communicates with the data buffers 110 may be smallerthan a bandwidth (e.g., the number of signal lines) within which therandom access memory devices 140 communicate with the data buffers 110.In this case, as illustrated in FIG. 7, parts of the first through Nthdata signal lines (DQ[1:N]) and the first through Mth data strobe signallines (DQS[1:M]) of the high speed interface 1230 may be connected tothe controller 150.

FIG. 8 illustrates a block diagram illustrating still anotherapplication example of the hybrid storage device of FIG. 2. Referring toFIGS. 1 and 8, the hybrid storage device 100 c includes data buffers110, driver circuit 120, serial presence detect (SPD) 130, random accessmemory devices 140, controller 150, nonvolatile memory devices 160 and abuffer memory 170. The following description will focus on thedifferences between the hybrid storage device 100 shown in FIG. 2 andthe hybrid storage device 100 c shown in FIG. 8, and description offeatures in FIGS. 2 and 8 that are the same may be omitted for the sakeof brevity.

The controller 150 stores data needed to control the nonvolatile memorydevices 160 in the buffer memory 170. For example, the controller 150can store and manage data needed to control a background operation ofthe nonvolatile memory devices 160 and data about a relation between alogical address of an external device and a physical address of thenonvolatile memory devices 160.

In some embodiments of the inventive concept, similarly as describedwith reference to FIGS. 3 and 4, a FIFO circuit may be provided as partof the data buffers 110 of the hybrid storage device 100 c shown in FIG.8. In other embodiments of the inventive concept, similarly as describedwith reference to FIG. 5, a FIFO circuit may be provided as part of thecontroller 150 of the hybrid storage device 100 c. In still furtherembodiments of the inventive concept, similarly as described withreference to FIG. 6, a FIFO circuit may be provided in the fourthchannel CH4 between the data buffers 110 and the controller 150.

FIG. 9 illustrates a block diagram of yet another application example ofthe hybrid storage device of FIG. 2. Referring to FIGS. 1 and 9, thehybrid storage device 100 d includes driver circuit 120, serial presencedetect (SPD) 130, random access memory devices 140, controller 150,nonvolatile memory devices 160 and switch circuits 180. The followingdescription will focus on the differences between the hybrid storagedevice 100 shown in FIG. 2 and the hybrid storage device 100 d shown inFIG. 9, and description of features in FIGS. 2 and 9 that are the samemay be omitted for the sake of brevity.

As compared with the hybrid storage device 100 of FIG. 2, the hybridstorage circuit 100 d shown in FIG. 9 includes the switch circuits 180instead of the data buffers 110. The switch circuits 180 electricallyconnect the high speed interface 1230 to one of the third channel CH3and the fourth channel CH4 in response to a switch signal SWS. In someembodiments of the inventive concept, the switch circuits 180 areconfigured to provide only an electrical connection relation between thehigh speed interface 1230 and one of the third channel CH3 and thefourth channel CH4, and do not perform an operation of rearranging datasignals DQS in synchronization with data strobe signals DQS. In otherembodiments of the inventive concept, the switch circuits 180 areconfigured to not only provide the aforementioned electrical connectionrelation, but to also perform an operation of rearranging data signalsDQS in synchronization with data strobe signals DQS.

The switch signals SWS controlling the switch circuits 180 may bereceived from the external device through the high speed interface 1230.

In some embodiments of the inventive concept, similarly as describedwith reference to FIGS. 3 and 4, a FIFO circuit may be provided as partof the switch circuits 180 shown in FIG. 9. In other embodiments of theinventive concept, similarly as described with reference to FIG. 5, aFIFO circuit may be provided as part of the controller 150. In stillfurther embodiments of the inventive concept, similarly as describedwith reference to FIG. 6, a FIFO circuit may be provided in the fourthchannel CH4 between the switch circuits 180 and the controller 150. Inother embodiments of the inventive concept, similarly as described withreference to FIG. 7, the switch circuits 180 can connect data signallines and strobe signal lines of the high speed interfaces 1230 to thethird channel CH3, and connect parts of the data signal lines and partsof the strobe signal lines of the high speed interface 1230 to thefourth channel CH4.

FIG. 10 illustrates a block diagram of still yet another applicationexample of the hybrid storage device of FIG. 2. Referring to FIGS. 1 and10, the hybrid storage device 100 e includes driver circuit 120, serialpresence detect (SPD) 130, random access memory devices 140, controller150, and nonvolatile memory devices 160. The following description willfocus on the differences between the hybrid storage device 100 shown inFIG. 2 and the hybrid storage device 100 e shown in FIG. 10, anddescription of features in FIGS. 2 and 10 that are the same may beomitted for the sake of brevity.

As compared with the hybrid storage device 100 of FIG. 2, the databuffers 110 are not provided in the hybrid storage device 100 e shown inFIG. 10. Data signals DQ and data strobe signals DQS of the high speedinterface 1230 are directly communicated with the random access memorydevices 140 and the controller 150. That is, data signal lines and datastrobe signal lines of the high speed interface 1230 branch off to thethird channel CH3 and the fourth channel CH4 at connection points (CP).

FIG. 11 illustrates an example of a connection point (CP) of FIG. 10.Referring to FIGS. 10 and 11, although not all of the data signal linesand not all of the data strobe lines and corresponding connections maybe shown, first through Nth data signal lines (DQ[1:N]) of the highspeed interface 1230 are connected to first through Nth data lines(DQ[1:N]) of the third channel CH3 respectively. First through Mth datastrobe signal lines (DQS[1:M]) of the high speed interface 1230 areconnected to first through Mth data strobe lines (DQS[1:M]) of the thirdchannel CH3 respectively. N and M are positive integers.

Parts of the first through Nth data signal lines (DQ[1:N]) of the highspeed interface 1230 are connected to first through Ith data lines(DQ[1:I]) of the fourth channel CH4 respectively. Parts of the firstthrough Mth data strobe signal lines (DQS[1:M]) of the high speedinterface 1230 are connected to first through Jth data strobe lines(DQS[1:J]) of the fourth channel CH4 respectively. I is a positiveinteger smaller than N and J is a positive integer smaller than M.

FIG. 12 illustrates a flowchart of an operation method of a hybridstorage device in accordance with some embodiments of the inventiveconcept. Referring to FIGS. 2 and 12, in step S110, the hybrid storagedevice 100 stores data signals DQ received from an external device in aFIFO circuit (FC). For example, as described with reference to FIGS. 3through 6, the FIFO circuit (FC) may be provided as part of the databuffers 110, as part of the controller 150, or in the fourth channel CH4between the controller 150 and the data buffers 110.

In step S120, if available free space in the FIFO circuit (FC) issmaller than a critical value VCR, in step S130 the hybrid storagedevice 100 transmits a warning to the external device. For example, thehybrid storage device 100 can transmit a warning to the external deviceby activating or deactivating an Alert_n signal or a Save_n signaldefined in a DIMM specification communicated between the SPD 130 and theexternal device as supplemental signals SS. The external device cancommunicate with the hybrid storage device 100 using supplementalsignals SS in response to the warning. The hybrid storage device 100 caninform the external device that free space of the FIFO circuit (FC) issmaller than the critical value VCR through the supplemental signals SS.

In a case where available free space of the FIFO circuit (FC) is largerthan the critical value VCR, the hybrid storage device 100 may nottransmit a warning.

FIG. 13 illustrates a block diagram of one of nonvolatile memory devices160 in accordance with some embodiments of the inventive concept.Referring to FIGS. 2 and 13, the memory device 160 includes memory cellarray 161, row decoder circuit 163, page buffer circuit 165, data I/O(input/output) circuit 167, and control logic circuit 169.

The memory cell array 161 includes a plurality of memory blocksBLK1˜BLKz. Each memory block includes a plurality of memory cells. Eachmemory block may be connected to the row decoder circuit 163 through atleast one ground select line GSL, a plurality of word lines WL, and atleast one string select line SSL. Each memory block may be connected tothe page buffer circuit 165 through a plurality of bit lines BL. Thememory blocks BLK1˜BLKz may be connected to the bit lines BL in common.Memory cells of the memory blocks BLK1˜BLKz may have the same structure.Each of the memory blocks BLK1˜BLKz may be an erase operation unit.Memory cells of the memory cell array 161 may be erased by one memoryblock unit. Memory cells that belong to one memory block may be erasedat the same time. Each memory block may be divided into a plurality ofsub blocks. Each sub block may be an erase operation unit.

The row decoder circuit 163 is connected to the memory cell array 161through a plurality of ground select lines GSL, a plurality of wordlines WL, and a plurality of string select lines SSL. The row decodercircuit 163 operates according to a control of the control logic circuit169. The row decoder circuit 163 decodes an address received through anI/O (input/output) channel from the controller 150 and control voltagesapplied to the string select lines SSL, the word lines WL and the groundselect lines GSL according to the decoded address.

For example, in a program operation, the row decoder circuit 163 appliesa program voltage (VPGM) to a selected word line of a memory blockselected by an address and applies a pass voltage (VPASS) to unselectedword lines of the selected memory block. In a read operation, the rowdecoder circuit 163 applies a select read voltage (VRD) to a selectedword line of a memory block selected by an address and applies anunselect read voltage (VREAD) to unselected word lines of the selectedmemory block. In an erase operation, the row decoder circuit 163 applieserase voltages (e.g., a ground voltage or voltages having levels similarto the ground voltage) to word lines of a memory block selected by anaddress.

The page buffer circuit 165 is connected to the memory cell array 161through the bit lines BL. The page buffer circuit 165 is connected tothe data input/output circuit 167 through a plurality of data lines DL.The page buffer circuit 165 operates under the control of the controllogic circuit 169.

In a program operation, the page buffer circuit 165 stores data to beprogrammed in memory cells. On the basis of the stored data, the pagebuffer circuit 165 applies voltages to the bit lines BL. For example,the page buffer circuit 165 may function as a write driver. In a readoperation, the page buffer circuit 165 senses voltages of the bit linesBL and stores a sensing result. For example, the page buffer circuit 165may function as a sense amplifier.

The data I/O circuit 167 is connected to the page buffer circuit 165through the data lines DL. The data I/O circuit 167 outputs data read bythe page buffer circuit 165 to the controller 150 through the I/Ochannel, and transfers data received from the controller 150 through theI/O channel to the page buffer circuit 165.

The control logic circuit 169 receives a command from the controller 150through the I/O channel and receives a control signal through a controlchannel. The control logic circuit 169 receives a command receivedthrough the I/O channel in response to the control signal, routes anaddress received through the I/O channel to the row decoder circuit 163,and routes data received through the I/O channel to the datainput/output circuit 167. The control logic circuit 169 decodes thereceived command and controls the nonvolatile memory device 160according to the decoded command.

In a read operation, the control logic circuit 169 generates a seconddata strobe signal (DQS) from a read enable signal (/RE) received fromthe controller 150 through the control channel. The generated seconddata strobe signal (DQS) may be output to the controller 150 through thecontrol channel. In a write operation, the control logic circuit 169receives the second data strobe signal (DQS) from the controller 150through the control channel.

FIG. 14 is a circuit diagram illustrating a memory block in accordancewith some embodiments of the inventive concept. Referring to FIG. 14,the memory block BLKa includes a plurality of cell strings (CS11˜CS21,CS12˜CS22). The cell strings (CS11˜CS21, CS12˜CS22) may be arrangedalong a row direction and a column direction to form rows and columns.

For example, the cell strings CS11 and CS12 arranged along the rowdirection may form a first row, and the cell strings CS21 and CS22arranged along the row direction may form a second row. The cell stringsCS11 and CS21 arranged along the column direction may form a firstcolumn, and the cell strings CS12 and CS22 arranged along the columndirection may form a second column.

Each cell string may include a plurality of transistors. The celltransistors include ground select transistors GST, memory cells MC1˜MC6,and string select transistors SSTa and SSTb. The ground selecttransistor GST, the memory cells MC1˜MC6 and string select transistorsSSTa and SSTb of each cell string may be laminated in a height directionperpendicular to a plane (e.g., a plane on a substrate of the memoryblock BLKa) on which the cell strings (CS11˜CS21, CS12˜CS22) arearranged along rows and columns.

The cell transistors may be charge trap type transistors havingthreshold voltages that vary depending on the amounts of charges trappedin an insulating layer.

Sources of the lowermost ground select transistors GST may be connectedto a common source line CSL in common.

Control gates of the ground select transistors GST of the cell strings(CS11˜CS21, CS12˜CS22) may be connected to ground select lines GSL1 andGSL2 respectively. Ground select transistors of the same row may beconnected to the same ground select line, and ground select transistorsof different rows may be connected to different ground select lines. Forexample, ground select transistors GST of the cell strings CS11 and CS12of the first row may be connected to the first ground select line GSL1,and ground select transistors GST of the cell strings CS21 and CS22 ofthe second row may be connected to the second ground select line GSL2.

Control gates of memory cells located at the same height (or order) froma substrate (or ground select transistors GST) may be connected to oneword line in common, and control gates of memory cells located atdifferent heights (or orders) from the substrate (or ground selecttransistors GST) may be connected to different word lines WL1˜WL6respectively. For example, the memory cells MC1 are connected to theword line WL1 in common. The memory cells MC2 are connected to the wordline WL2 in common. The memory cells MC3 are connected to the word lineWL3 in common. The memory cells MC4 are connected to the word line WL4in common. The memory cells MC5 are connected to the word line WL5 incommon. The memory cells MC6 are connected to the word line WL6 incommon.

At first string select transistors SSTa of the same height (or order) ofthe cell strings (CS11˜CS21, CS12˜CS22), control gates of the firststring select transistors SSTa of different rows are connected todifferent string select lines SSL1 a˜SSL2 a respectively. For example,the first string select transistors SSTa of the cell strings CS11 andCS12 are connected to the string select line SSL1 a in common. The firststring select transistors SSTa of the cell strings CS21 and CS22 areconnected to the string select line SSL2 a in common.

At second string select transistors SSTb of the same height (or order)of the cell strings (CS11˜CS21, CS12˜CS22), control gates of the secondstring select transistors SSTb of different rows are connected todifferent string select lines SSL1 b˜SSL2 b respectively. For example,the second string select transistors SSTb of the cell strings CS11 andCS12 are connected to the string select line SSL1 b in common. Thesecond string select transistors SSTb of the cell strings CS21 and CS22are connected to the string select line SSL2 b in common.

That is, cell strings of different rows are connected to differentstring select lines. String select transistors of the same height (ororder) of cell strings of the same row are connected to the same stringselect line. String select transistors of different heights (or orders)of cell strings of the same row are connected to different string selectlines.

String select transistors of cell strings of the same row may beconnected to one string select line in common. For example, the stringselect transistors SSTa and SSTb of the cell strings CS11 and CS12 ofthe first row may be connected to one string select line in common. Thestring select transistors SSTa and SSTb of the cell strings CS21 andCS22 of the second row may be connected to one string select line incommon.

Columns of the cell strings (CS11˜CS21, CS12˜CS22) are connected todifferent bit lines BL1 and BL2 respectively. For example, the stringselect transistors SSTb of the cell strings CS11˜CS21 of the firstcolumn are connected to the bit line BL1 in common. The string selecttransistors SSTb of the cell strings CS12˜CS22 of the second column areconnected to the bit line BL2 in common.

The cell strings CS11 and CS12 may form a first plane. The cell stringsCS21 and CS22 may form a second plane.

In a memory block BLKa, memory cells of each height of each plane mayform a physical page. The physical page may be a write unit and a readunit of the memory cells MC1˜MC6. For example, one plane of the memoryblock BLKa may be selected by the string select lines SSL1 a, SSL1 b,SSL2 a and SSL2 b. When a turn-on voltage is supplied to the stringselect lines SSL1 a and SSL1 b and a turn-off voltage is supplied to thestring select lines SSL2 a and SSL2 b, the cell strings CS11 and CS12 ofthe first plane are connected to the bit lines BL1 and BL2. That is, thefirst plane is selected. When a turn-on voltage is supplied to thestring select lines SSL2 a and SSL2 b and a turn-off voltage is suppliedto the string select lines SSL1 a and SSL1 b, the cell strings CS21 andCS22 of the second plane are connected to the bit lines BL1 and BL2.That is, the second plane is selected. In the selected plane, one row ofthe memory cells MC may be selected by the word lines WL1˜WL6. In theselected row, a select voltage may be applied to the second word lineWL2 and an unselect voltage may be applied to the remaining word linesWL1 and WL3˜WL6. That is, a physical page corresponding to the secondword line WL2 of the second plane may be selected by adjusting voltagesof the string select lines SSL1 a, SSL1 b, SSL2 a and SSL2 b and theword lines WL1˜WL6. In the memory cells MC2 of the selected physicalpage, a write or read operation may be performed.

In the memory block BLKa, an erase of the memory cells MC1˜MC6 may beperformed by a memory block unit or a sub block unit. When an eraseoperation is performed by a memory block unit, all the memory cells MCof the memory block BLKa may be erased at the same time according to anerase request (e.g., an erase request from an external memorycontroller). When an erase operation is performed by a sub block unit, apart of the memory cells MC1˜MC6 of the memory block BLKa may be erasedat the same time according to an erase request and the remaining memorycells may be erase-prohibited. A low voltage (for example, a groundvoltage or a voltage having a level similar to the ground voltage) maybe supplied to a word line connected to memory cells MC being erased anda word line connected to erase-prohibited memory cells MC may befloated.

The memory block BLKa illustrated in FIG. 14 is illustrative. Theinventive concept is not limited to the memory block BLKa illustrated inFIG. 14. For example, the number of rows of the cell strings mayincrease or decrease. As the number of rows of the cell strings ischanged, the number of string select lines or ground select lines thatare connected to the rows of the cell strings and the number of cellstrings connected to one bit line may also be changed.

The number of columns of the cell strings may increase or decrease. Asthe number of columns of the cell strings is changed, the number of bitlines connected to the columns of the cell strings and the number ofcell strings connected to one string select line may also be changed.

A height of the cell strings may increase or decrease. For example, thenumber of ground select transistors, memory cells or string selecttransistors that are laminated on each of the cell strings may increaseor decrease.

Memory cells MC that belong to one physical page may correspond to atleast three logical pages. For example, k (k is a positive integergreater than 2) number of bits may be programmed into one memory cellMC. In memory cells MC that belong to one physical page, k number ofbits being programmed into each memory cell MC may form k number oflogical pages respectively.

In an embodiment of the present inventive concept, a three dimensional(3D) memory array is provided. The 3D memory array is monolithicallyformed in one or more physical levels of arrays of memory cells havingan active area disposed above a silicon substrate and circuitryassociated with the operation of those memory cells, whether suchassociated circuitry is above or within such substrate. The term“monolithic” means that layers of each level of the array are directlydeposited on the layers of each underlying level of the array.

In an embodiment of the present inventive concept, the 3D memory arrayincludes vertical NAND strings that are vertically oriented such that atleast one memory cell is located over another memory cell. The at leastone memory cell may comprise a charge trap layer. Each vertical NANDstring may include at least one select transistor located over memorycells, the at least one select transistor having the same structure asthe memory cells and being formed monolithically together with thememory cells.

The following patent documents, which are hereby incorporated byreference, describe suitable configurations for three-dimensional memoryarrays, in which the three-dimensional memory array is configured as aplurality of levels, which word lines and/or bit lines shared betweenlevels: U.S. Pat. Nos. 7,679,133; 8,553,466; 8,654,587; 8,559,235; andUS Pat. Pub. No. 2011/0233648.

FIG. 15 illustrates an example of a server device 2000 on which at leastone of hybrid storage devices (100, 100 a˜100 e) in accordance with someembodiments of the inventive concept is mounted. Referring to FIG. 15,the server device 2000 may include at least two racks 2010. At least twohybrid storage devices 100 may be mounted on each of the racks 2010.

Each of the racks 2010 can mount at least one of the hybrid storagedevices (100, 100 a˜100 e), the main memory devices 1210, at least oneprocessor 1100, at least one chipset 1300, and at least one storagedevice 1700. The I/O device 1600, the graphic processor 1400, and thedisplay device 1500 may be provided to the server device 2000.

According to some embodiments of the inventive concept, nonvolatilememory devices are connected to a host device through a high speedinterface. The nonvolatile memory devices or random access memorydevices are freely accessed according to an intention of the hostdevice. Thus, a storage device having improved speed and improvedflexibility is provided.

Although a few embodiments of the present general inventive concept havebeen shown and described, it should be appreciated by those skilled inthe art that changes may be made in these embodiments without departingfrom the principles and spirit of the general inventive concept, thescope of which is defined in the appended claims and their equivalents.Therefore, the above-disclosed subject matter is to be consideredillustrative, and not restrictive.

What is claimed is:
 1. A load reduced dual in-line memory module(LRDIMM) comprising: a nonvolatile memory device; a buffer configured tostore data received from an external host device through a dual in-linememory module (DIMM) interface; and a controller configured to move thedata stored in the buffer into the nonvolatile memory device, wherein:the LRDIMM is further configured to transmit an alert signal to theexternal host device when a free space of the buffer is smaller than acritical value, and the alert signal is transmitted through a signalline separate from lines transmitting a command, an address and thedata.
 2. The LRDIMM of claim 1, wherein the buffer includes a first-infirst-out circuit.
 3. The LRDIMM of claim 1, wherein the controllerincludes the buffer.
 4. The LRDIMM of claim 1, wherein the controllerprovides a write path including the buffer and a read path separate fromthe write path to the external host device.
 5. The LRDIMM of claim 1,wherein the nonvolatile memory device includes a phase-change randomaccess memory (PRAM).
 6. The LRDIMM of claim 1, wherein the nonvolatilememory device comprises a plurality of memory blocks, each memory blockincluding a plurality of cell strings, each cell string including atleast one ground select transistor, a plurality of memory cells, and atleast one string select transistor which are laminated along a directionperpendicular to a substrate.
 7. The LRDIMM of claim 1, wherein thecontroller is further configured to receive a command and an address andmove the data stored in the buffer into a storage space of thenonvolatile memory device indicated by the address in response to thecommand.
 8. The LRDIMM of claim 1, further comprising a data bufferconfigured to deliver the data received from the external host device tothe buffer.
 9. The LRDIMM of claim 8, wherein the data buffer is furtherconfigured to deliver second data received from the controller to theexternal host device.
 10. The LRDIMM of claim 1, wherein the controlleris further configured to read second data from the nonvolatile memorydevice and output the second data read from the nonvolatile memorydevice to the external host device bypassing the buffer.
 11. A dualin-line memory module (DIMM) comprising: a nonvolatile memory device;and a buffer configured to store data received from an external hostdevice, wherein: the DIMM is configured to move data stored in thebuffer into the nonvolatile memory device and transmit an alert signalto the external host device when a free space of the buffer is smallerthan a critical value, and the alert signal is transmitter through asignal line separate from lines transmitting a command, an address andthe data.
 12. The DIMM of claim 11, wherein the nonvolatile memorydevice comprises a plurality of memory blocks, each memory blockincluding a plurality of cell strings, each cell string including atleast one ground select transistor, a plurality of memory cells, and atleast one string select transistor which are laminated along a directionperpendicular to a substrate.
 13. The DIMM of claim 11, wherein thenonvolatile memory device includes a phase-change random access memory(PRAM).
 14. A load reduced dual in-line memory module (LRDIMM)comprising: a driver circuit configured to receive a command and anaddress from an external host device; a phase-change random accessmemory (PRAM) device; and a controller configured to receive the commandand the address from the driver circuit and access the PRAM device inresponse to the command and the address, wherein: the controllercomprises a first-in first-out circuit that provides a write pathincluding the first-in first-out circuit by moving data stored in thefirst-in first-out circuit into the PRAM device and provides a read pathseparate from the write path, and the driver circuit is furtherconfigured to transmit an alert signal to the external host devicethrough a signal line separate from the driver circuit and the first-infirst-out circuit when a free space of the first-in first-out circuit issmaller than a critical value.
 15. The LRDIMM of claim 14, wherein thecontroller is configured to communicate the data directly with theexternal host device.
 16. The LRDIMM of claim 14, wherein the controlleris further configured to move the data stored in the first-in first-outcircuit into a storage space of the PRAM device indicated by the addressin response to the command.
 17. The LRDIMM of claim 14, wherein thecontroller is further configured to read second data from the PRAMdevice and output the second data read from the PRAM device to theexternal host device through the read path.
 18. The LRDIMM of claim 14,wherein: the PRAM device includes a plurality of PRAMs, and thecontroller is further configured to move the data into at least one ofthe plurality of PRAMs indicated by the address in response to thecommand.
 19. The LRDIMM of claim 14, further comprising a data bufferconfigured to deliver the data from the external host device to thefirst-in first-out circuit in response to a signal from the drivercircuit.